? 2009 ixys corporation, all rights reserved v ces = 3000v i c25 = 22a v ce(sat) 3.2v IXGF20N300 ds100099b(11/09) symbol test conditions maximum ratings v ces t j = 25c to 150c 3000 v v cgr t j = 25c to 150c, r ge = 1m 3000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 22 a i c90 t c = 90c 14 a i cm t c = 25c, v ge = 20v, 1ms 103 a ssoa v ge = 20v, t vj = 125c, r g = 10 i cm = 200 a (rbsoa) clamped inductive load @0.8 ? v ces p c t c = 25c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120/4.5..27 nm/lb-in. v isol 50/60hz, 1 minute 4000 v~ weight 6g high voltage igbt for capacitor discharge applications ( electrically isolated tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 3000 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces , v ge = 0v 25 a note 2, t j = 125c 2 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 20a, v ge = 15v, note 1 3.2 v features silicon chip on direct-copper bond (dcb) substrate isolated mounting surface 4000v electrical isolation high peak current capability low saturation voltage molding epoxies meet ul 94 v-0 flammability classification applications capacitor discharge pulser circuits advantages high power density easy to mount 1 = gate 5 = collector 2 = emitter isoplus i4-pak tm isolated tab 1 5 2
ixys reserves the right to change limits, test conditions, and dimensions. IXGF20N300 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 20a, v ce = 10v, note 1 8 12 s i c(on) v ge = 20v, v ce = 20v, note 1 180 a c ies 1125 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 48 pf c res 16 pf q g 31 nc q ge i c = 20a, v ge = 15v, v ce = 600v 5.8 nc q gc 12 nc t d(on) 38 ns t r 486 ns t d(off) 145 ns t f 210 ns r thjc 1.25 c/w r thcs 0.15 c/w r thja 30 c/w resistive switching times i c = 20a, v ge = 15v v ce = 960v, r g = 10 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 isoplus i4-pak tm (hv) outline pin 1 = gate pin 2 = emitter pin 3 = collector tab 4 = isolated notes: 1. pulse test, t < 300 s, duty cycle, d < 2%. 2. device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway.
? 2009 ixys corporation, all rights reserved IXGF20N300 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0123456 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 220 0 2 4 6 8 1012141618202224 v ce - volts i c - amperes 10v 15v 5v v ge = 25v 20v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 012345678 v ce - volts i c - amperes v ge = 25v 20v 5v 10v 15v fig. 4. dependence of v ce(sat) on junction temperature 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 80a i c = 20a i c = 40a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 9 10 7 8 9 10111213141516171819 v ge - volts v ce - volts v ge = 15v 20a 40a i c = 80a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 45678910111213 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGF20N300 fig. 11. maximum transient thermal impedance 0.0 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z ( t h ) jc - oc / w fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 0 102030405060708090 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 4 8 12 16 20 24 28 32 q g - nanocoulombs v ge - volts v ce = 600v i c = 20a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 9. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 220 600 900 1200 1500 1800 2100 2400 2700 3000 v ce - volts i c - amperes t j = 125oc r g = 10 ? dv / dt < 10v / ns
? 2009 ixys corporation, all rights reserved ixys ref: g_20n250(4p-p528)11-18-09-b IXGF20N300 fig. 12. resistive turn-on rise time vs. junction temperature 300 400 500 600 700 800 900 1000 1100 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 ? , v ge = 15v v ce = 960v i c = 40a i c = 20a fig. 13. resistive turn-on rise time vs. collector current 300 400 500 600 700 800 900 1000 20 30 40 50 60 70 80 i c - amperes t r - nanoseconds t j = 125oc r g = 10 ? , v ge = 15v v ce = 960v t j = 25oc fig. 16. resistive turn-off switching times vs. collector current 120 140 160 180 200 220 240 20 30 40 50 60 70 80 i c - amperes t f - nanoseconds 80 100 120 140 160 180 200 t d ( off ) - nanoseconds t j = 125oc t j = 25oc t f t d(off ) - - - - r g = 10 ? , v ge = 15v v ce = 960v fig. 14. resistive turn-on switching times vs. gate resistance 600 800 1,000 1,200 1,400 1,600 1,800 2,000 10 100 1000 r g - ohms t r - nanoseconds 0 50 100 150 200 250 300 350 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 20a, 40a fig. 15. resistive turn-off switching times vs. junction temperature 130 140 150 160 170 180 190 200 210 220 230 240 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 115 120 125 130 135 140 145 150 155 160 165 170 t d ( off ) - nanoseconds t f t d(off ) - - - - r g = 10 ? , v ge = 15v v ce = 960v i c = 20a i c = 40a fig. 17. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 700 800 900 10 100 1000 r g - ohms t f - nanoseconds 0 300 600 900 1200 1500 1800 2100 2400 2700 t d ( off ) - nanoseconds i c = 20a, 40a t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 960v
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